EPFL HEMT MODEL
2019-08-29 04:18:54 | Compact Models | Contributor(s): Farzan Jazaeri, jean-michel sallese, Majid Shalchian, Matthias Bucher, Nikolaos Makris | doi:10.21981/GPPJ-VP68
The EPFL HEMT Model is a design-oriented charge-based model for dc operation of AlGaAs/GaAs and AlGaN/GaN-based high-mobility field-effect transistors. The intrinsic model is physics-based and the central concept is based on charge linear approximation.
MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) compact model
2015-08-31 13:49:15 | Compact Models | Contributor(s): Ujwal Radhakrishna, Dimitri Antoniadis | doi:10.4231/D3086365H
MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) model is a charge based physical model for HV-GaN HEMTs suitable for power switching applications.
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