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UCSB Graphene Nanoribbon Interconnect Compact Model
2017-05-03 21:16:20 | Compact Models | Contributor(s): Junkai Jiang, Kaustav Banerjee, Wei Cao | doi:10.4231/D3NK3663N
As the (local) interconnect dimension scales down to sub-20 nm, the rapidly increasing metal resistance by barrier layer and surface and grain boundary scatterings, and the diminishing current carrying capacity by self-heating and Joule-heating, the metal (Cu) interconnect cannot meet the...
Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs
2016-04-07 19:19:34 | Compact Models | Contributor(s): Jorge-Daniel Aguirre Morales, Sébastien Frégonèse, Chhandak Mukherjee, Cristell Maneux, Thomas Zimmer | doi:10.4231/D30C4SM1H
2015-04-30 14:25:13 | Compact Models | Contributor(s): Junkai Jiang, Wei Cao, Kaustav Banerjee | doi:10.4231/D34Q7QR19
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