Publications: All

  1. highfrequency x
  1. nMOSFET RF and noise model on standard 45nm SOI technology

    2017-01-05 16:57:48 | Compact Models | Contributor(s): Yanfei Shen, Saeed Mohammadi | doi:10.4231/D3833N04K

    A compact scalable model suitable for predicting high frequency noise and nonlinear behavior of N-type Metal Oxide Semiconductor (NMOS) transistors is presented.
  2. CCAM Compact Carbon Nanotube Field-Effect Transistor Model

    2015-10-07 14:56:43 | Compact Models | Contributor(s): Michael Schroter, Max Haferlach, Martin Claus | doi:10.4231/D3VD6P595

    CCAM is a semi-physical carbon nanotube field-effect transistor model applicable for digital, analog and high frequency applications.