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  1. Stanford Virtual-Source Carbon Nanotube Field-Effect Transistors Model

    2015-04-09 14:21:12 | Compact Models | Contributor(s): Chi-Shuen Lee, H.-S. Philip Wong | doi:10.4231/D3BK16Q68

    The VSCNFET model captures the dimensional scaling properties and includes parasitic resistance, capacitance, and tunneling leakage currents. The model aims for CNFET technology assessment for the sub-10-nm technology nodes.