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  1. MVS Nanotransistor Model (Silicon)

    MVS Nanotransistor Model (Silicon)

    2015-12-02 17:03:59 | Compact Models | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D3RR1PN6M

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.

  2. MVS III-V HEMT model

    MVS III-V HEMT model

    2015-12-01 16:40:24 | Compact Models | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D37S7HT39

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters. This model is designed for HEMT.

  3. Released Resonant Body Transistor with MIT Virtual Source (RBT-MVS) Model

    Released Resonant Body Transistor with MIT Virtual Source (RBT-MVS) Model

    2015-08-31 00:00:00 | Compact Models | Contributor(s): Bichoy W. Bahr, Dana Weinstein, Luca Daniel | doi:10.4231/D3VH5CK04

    An RBT is a micro-electromechanical (MEM) resonator with a transistor (FET) incorporated into the resonator structure to sense the mechanical vibrations. This is a fully-featured spice-compatible compact model for fast analysis of RBTs.

  4. Verilog-A implementation of the compact model for organic thin-film transistors oTFT

    Verilog-A implementation of the compact model for organic thin-film transistors oTFT

    2015-06-16 12:26:13 | Compact Models | Contributor(s): Ognian Marinov | doi:10.4231/D3R785Q3B

    Compact model oTFT supports mobility bias enhancement, contact effects, channel modulation and leakage in organic thin-film transistors. Version 2.04.01 “mirrors” TFT in all regimes of operation by DC, AC and transient simulations.

  5. mCell Model

    mCell Model

    2015-01-20 00:40:32 | Compact Models | Contributor(s): David M. Bromberg, Daniel H. Morris | doi:10.4231/D3CR5ND3Q

    This model is a hybrid physics/empirical compact model that describes digital switching behavior of an mCell logic devices, where a write current moves a domain wall to switch the resistance of a magnetic tunnel junction between stable states.

  6. R3

    R3

    2014-11-21 15:20:44 | Compact Models | Contributor(s): Colin McAndrew | doi:10.4231/D3QB9V64G

    Compact model for polysilicon (poly) resistors, 3-terminal JFETs, and diffused resistors.

  7. FET pH Sensor Model

    FET pH Sensor Model

    2015-06-04 14:39:01 | Compact Models | Contributor(s): Piyush Dak, Muhammad A. Alam | doi:10.4231/D30000150

    The FET pH sensor model is a surface potential compact model for FET based pH sensors that accurately describes the physics of electrolyte and surface charges that respond to pH.

  8. Spin Switch Model

    Spin Switch Model

    2014-10-28 13:21:08 | Compact Models | Contributor(s): Samiran Ganguly, Kerem Yunus Camsari, Supriyo Datta | doi:10.4231/D3C824F8D

    We present a circuit/compact model for the Spin Switch created using a Verilog-A based library of "spintronic lego blocks" building upon previous works on spin transport.

  9. Stanford University Resistive-Switching Random Access Memory (RRAM) Verilog-A Model

    Stanford University Resistive-Switching Random Access Memory (RRAM) Verilog-A Model

    2014-10-23 20:13:21 | Compact Models | Contributor(s): Zizhen Jiang, H.-S. Philip Wong | doi:10.4231/D37H1DN48

    The Stanford University RRAM Model is a SPICE-compatible compact model which describes switching performance for bipolar metal oxide RRAM.

  10. Purdue Nanoelectronics Research Laboratory Magnetic Tunnel Junction Model

    Purdue Nanoelectronics Research Laboratory Magnetic Tunnel Junction Model

    2014-10-23 20:13:09 | Compact Models | Contributor(s): Xuanyao Fong, Sri Harsha Choday, Panagopoulos Georgios, Charles Augustine, Kaushik Roy | doi:10.4231/D33R0PV04

    This is the Verilog-A model of the magnetic tunnel junction developed by the Nanoelectronics Research Laboratory at Purdue University.

  11. TAG Solar Cell Model (p-i-n thin film)

    TAG Solar Cell Model (p-i-n thin film)

    2014-10-23 17:59:16 | Compact Models | Contributor(s): Sourabh Dongaonkar, Xingshu Sun, Mark Lundstrom, Muhammad A. Alam | doi:10.4231/D3V97ZS4G

    The TAG solar cell model is a physics-based compact model for p-i-n thin film solar cells that can be used for panel level simulations.

  12. Released Resonant Body Transistor (RBT) Model

    Released Resonant Body Transistor (RBT) Model

    2014-10-23 19:00:45 | Compact Models | Contributor(s): Bichoy W. Bahr, Dana Weinstein, Luca Daniel | doi:10.4231/D3KS6J55W

    An RBT is a micro-electromechanical (MEM) resonator with a transistor (FET) incorporated into the resonator structure to sense the mechanical vibrations. The model is aimed to present a deep insight into the physics of the RBT.

  13. MIT Virtual Source GaNFET-RF ( MVSG-RF) Model

    MIT Virtual Source GaNFET-RF ( MVSG-RF) Model

    2014-10-23 18:43:25 | Compact Models | Contributor(s): Ujwal Radhakrishna, Dimitri Antoniadis | doi:10.4231/D3G15TC12

    The MVS-G-RF GaN HEMT model is a self-consistent transport/capacitance model for scaled GaN HEMT devices used in RF applications.

  14. Ambipolar Virtual Source Compact Model for Graphene FETs

    Ambipolar Virtual Source Compact Model for Graphene FETs

    2014-10-23 18:47:56 | Compact Models | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D3MS3K273

    This is a compact physics-based ambipolar-virtual-source (AVS) model that describes carrier transport in both unipolar and ambipolar regimes in quasi-ballistic graphene field-effect transistors (GFETs).