An empirical low field mobility model based on measurement data for silicon at various temperatures. The model has the following general form:
where N is the net doping concentration. All the parameters are functions of in the form of ( in K), for example:
with the last expression on the right using the Prophet database parameter names.
Conventional usage expresses mobility in units of ; however, Prophet uses units of , so the numerical values of the mobility parameters appear to be larger than usual.
The following table gives the parameter names and default values (note that the ``.p'' parameters are the temperature exponents):
Table 1: Doping Dependent Mobility Parameters and Default Values