An empirical low field mobility model based on measurement data for silicon at various temperatures. The model has the following general form:

where *N* is the net doping concentration. All the parameters are functions of in the form of
( in K), for example:

with the last expression on the right using the Prophet database parameter names.

Conventional usage expresses mobility in units of ; however, Prophet uses units of , so the numerical values of the mobility parameters appear to be larger than usual.

The following table gives the parameter names and default values (note that the ``.p'' parameters are the temperature exponents):

**Table 1:** Doping Dependent Mobility Parameters and Default Values

Mon Jul 1 14:45:00 PDT 2002