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Making the Tiniest and Fastest Transistor using Atomic Layer Deposition (ALD)

By Peide "Peter" Ye

Purdue University

Published on

Abstract

Atomic layer deposition (ALD) is an emerging nanotechnology, which is a surface controlled self-limiting process and enables us to deposit ultrathin films one atomic layer by one atomic layer. ALD provides an unprecedented and powerful capability to grow or regrow nanoscale ultrathin films of metals, semiconductors and insulators. We will introduce the concept of ALD and the process how to the tiniest and fastest transistor using ALD.

Bio

Peide (Peter) Ye received the B.S. degree in electrical engineering from Fudan University, Shanghai, China, in 1988 and Ph.D. in solid state physics from Max-Planck-Institute of Solid State Research, Stuttgart, Germany, in 1996. From 1996 to 2000, he was postdoc research fellow at NTT and NHMFL/Princeton University. He joined Bell Laboratories, Murray Hill, NJ and now Agere Systems in 2001 as a Member of Technical Staff and became a Senior Member of Technical Staff in 2003. Starting January 2005, he is an Associate Professor of Electrical and Computer Engineering at Purdue University. His research activities include semiconductor physics and devices, nanofabrication and nanostructures, quantum/spin related transport, and recently ALD and III-V MOSFETs for high-speed, high-power or digital applications.

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Researchers should cite this work as follows:

  • (2006), "Making the Tiniest and Fastest Transistor using Atomic Layer Deposition (ALD)," http://nanohub.org/resources/1015.

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EE Building, Room 317

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