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PN Junctions: Simulation and Calculation of Electrostatic Variables

By Stella Quinones

University of Texas at El Paso

Published on

Abstract

Homework assignment that combines basic PN junction electrostatic variable calculations (Vbi, Xn, Xp and Emax) with the simulation of PN junctions for 2 sets of doping conditions. Both forward and reverse bias conditions are simulated. This homework assignment is designed for junior level undergraduate Electrical and Computer Engineering (ECE) students enrolled in the first Electronic Devices course in the ECE curriculum.

Bio

Dr. Stella Quinones is an Associate Professor of Electrical and Computer Engineering at The University of Texas at El Paso (UTEP) where she has been a faculty member for the past 13 years. She held the Forest O. and Henrietta Lewis Professorship in Electrical Engineering and is a 2010 UT Regents' Outstanding Teaching Award recipient and also received the 2011 Distinguished Achievement Award for Teaching Excellence. Her current research areas include planar and nano-scale selective CdTe deposition on CdTe(111), Si(100), Si(211) and SOI substrates using a conventional and state-of-the-art close-spaced sublimation (CSS) technique for applications related to solar cells and infrared detectors.

Sponsored by

This project is supported by NSF NCN Grant EEC-0634750.

Cite this work

Researchers should cite this work as follows:

  • Stella Quinones (2011), "PN Junctions: Simulation and Calculation of Electrostatic Variables," http://nanohub.org/resources/10250.

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