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III-V compounds have established their niches in optoelectronic, high-frequency and high-speed device applications that cannot be matched by Si electronics. However, Si has been and will remain the workhorse in
the semiconductor industry. To further improve the performance and extend the functionalities of Si-based electronics, the best approach is to combine these well-developed materials and related technologies. Our group has been investigating integration of III-V devices on a Si platform. Using metamorphic growth of III-V materials, high quality devices can be directly grown and fabricated on Si substrates that will allow continued use of the traditional and ever improving manufacturing technologies for Si. In this talk, I will discuss various hetero-epitaxy techniques, including III-Nitrides growth on Si and metamorphic devices (latticematched to InP) on GaAs/Si substrates. The former allows the use of low cost and large size Si substrates for manufacture of LEDs and hightemperature/power electronics. InP-based HEMTs and HBTs are high performance devices normally grown on high-cost and fragile InP substrates. We have successfully grown high-speed HEMT devices on Si
substrates for digital applications. Various metamorphic growth issues
pertinent to devices performance and manufacturability will be addressed.
Strain management and cracking are major concerns, as well as resistivity and dislocation density in the buffers in relation to device leakage and performance. All these issues and how we address them will be
University of Illinois at Urbana-Champaign
Researchers should cite this work as follows:
Kei May Lau (2011), "Illinois Nano EP Seminar Series Spring 2010 - Lecture 1: Hetero-epitaxy of III-V Compounds on Silicon Substrates by MOCVD for Device Applications ," https://nanohub.org/resources/10567.