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In this presentation it is explained clearly when one can use the relaxation approximation and when one needs to use Rode's iterative method to calculate the low-field mobility in semiconductors. At the end examples are given of the effective and Hall mobilities which, as can be seen from the examples, are different and the constant of proportionallity is the Hall scattering factor.
Researchers should cite this work as follows:
Dragica Vasileska (2011), "Solution of the Boltzmann Equation under low-field conditions," https://nanohub.org/resources/10766.