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NanoFET

By M. P. Anantram1, Shaikh S. Ahmed2, alexei svizhenko3, Derrick Kearney4, Gerhard Klimeck4

1. NASA 2. Southern Illinois University Carbondale 3. Stanford University 4. Purdue University

Simulates ballistic transport in 2D MOSFET devices

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Version 1.5 - published on 17 Jun 2011

DOI: 10254/nanohub-r1090.6 cite this

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Usage

Table 1: Overview
Item Average Total
Simulation Users: - 806
Interactive Sessions: - 2,684
Simulation Sessions: - 3,341
Simulation Runs: - 36,389
Wall Clock Time: 9.83 hours 1368.82 days
CPU time: 1.07 hours 148.75 days
Interaction Time: 1.11 hours 154.85 days

Table 2: Users By Organization Type
# Type Users Percent
1 Educational - University 727 90.2
2 Industry 33 4.09
3 Unidentified 19 2.36
4 National Lab 16 1.99
5 Educational - Pre-College 12 1.49
6 Unemployed 4 0.5
7 Government Agency 3 0.37
8 Military 1 0.12
Total Users 806 100
Table 3: Users by Country of Residence
# Country Users Percent
1 UNITED STATES 341 42.31
2 INDIA 104 12.9
3 CHINA 42 5.21
4 TAIWAN 28 3.47
5 KOREA, REPUBLIC OF 27 3.35
6 COLOMBIA 26 3.23
7 GERMANY 23 2.85
8 CANADA 17 2.11
9 BANGLADESH 13 1.61
10 UNITED KINGDOM 11 1.36
Total Users 806 100
Table 4: Top Domains by User Count
# Domains Users Percent
1 Unidentified 297 36.85
2 rr.com 33 4.09
3 purdue.edu 32 3.97
4 mchsi.com 31 3.85
5 comcast.net 31 3.85
6 siu.edu 21 2.61
7 verizon.net 21 2.61
8 etb.net.co 15 1.86
9 uc.edu 15 1.86
10 nctu.edu.tw 13 1.61
Total Users 806 100

Location of all "NanoFET" Users Since Its Posting

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