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By Neophytos Neophytou1, Shaikh S. Ahmed2, POLIZZI ERIC3, Gerhard Klimeck4, Mark Lundstrom4

1. Technical University of Vienna 2. Southern Illinois University Carbondale 3. University of Massachusetts, Amherst 4. Purdue University

Simulates ballistic transport properties in 3D Carbon NanoTube Field Effect Transistor (CNTFET) devices

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Version 1.6.3 - published on 10 Sep 2015

doi:10.4231/D3222R70F cite this

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Recent Questions (11)
866 why the saturation current increases with decrease in diameter of the CNT
Asked by rasmita sahoo Open 5
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450 what is the threshold voltage
Asked by rasmita sahoo Open 3
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Asked by Afiq Afiq Afiq Open 0
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1078 Can you please tell me the working of CNTFET. It seems a bit confusing to me. what type of cntfet do you use? SB or gate doped?
Asked by Aditya Sodhani Open 0
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459 is there a problem with the simulator?
Asked by Luis Miguel DÃaz Albarrán Open 1
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416 How long did users took to run a simulation for CNTFET? It took me like1 hr to run a simulation. Is this normal?
Asked by Anonymous Open 2
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902 Where, why, and how you used Dyson equation
Asked by Anonymous Closed 1
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872 Why the effect of temperature is different at on and off-state current?
Asked by Shaahin G Shirazi Closed 1
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200 why I~vds curve shows higher saturation current for longer channel length?
Asked by rasmita sahoo Closed 1
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167 What is the Diameter of the nanotube in this simulation?
Asked by Anonymous Closed 1
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20 i can’t find output in simulation of cntfet
Asked by bill warner Closed 2, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.