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By Neophytos Neophytou1, Shaikh S. Ahmed2, POLIZZI ERIC3, Gerhard Klimeck4, Mark Lundstrom4
1. Technical University of Vienna 2. Southern Illinois University Carbondale 3. University of Massachusetts, Amherst 4. Purdue University
Simulates ballistic transport properties in 3D Carbon NanoTube Field Effect Transistor (CNTFET) devices
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Version 1.6.1 - published on 26 Apr 2012
doi:10.4231/D32B8VB3H cite this
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