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By Shaikh S. Ahmed1, Dragica Vasileska2

1. Southern Illinois University Carbondale 2. Arizona State University

Quantum-corrected Monte-Carlo transport simulator for two-dimensional MOSFET devices.

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Archive Version 1.1
Published on 16 Jun 2008, unpublished on 24 Jun 2008
Latest version: 1.1.5. All versions

doi:10.4231/D3862BB1J cite this

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QuaMC (pronunciation: quamsee) 2-D is effectively a quasi three-dimensional quantum-corrected semiclassical Monte Carlo transport simulator for conventional and non-conventional MOSFET devices. A parameter-free quantum field approach has been developed and utilized quite successfully in order to capture the size-quantization effects in nanoscale MOSFETs. The method is based on a perturbation theory around thermodynamic equilibrium and leads to a quantum field formalism in which the size of an electron depends upon its energy[2,3]. This simulator uses different self-consistent event-biasing schemes for statistical enhancement in the Monte-Carlo device simulations. Enhancement algorithms are especially useful when the device behavior is governed by rare events in the carrier transport process. A bias technique, particularly useful for small devices, is obtained by injection of hot carriers from the boundaries[4]. Regarding the Monte Carlo transport kernel, the explicit inclusion of the longitudinal and transverse masses in the silicon conduction band is done in the program using the Herring-Vogt transformation. Intravalley scattering is limited to acoustic phonons. For the intervalley scattering, both g- and f-phonon processes have been included.

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