Support Options

Submit a Support Ticket



By Shaikh S. Ahmed1, Dragica Vasileska2

1. Southern Illinois University Carbondale 2. Arizona State University

Quantum-corrected Monte-Carlo transport simulator for two-dimensional MOSFET devices.

Launch Tool

You must login before you can run this tool.

Version 1.1.4 - published on 15 Mar 2011

doi:10.4231/D3542J801 cite this

This tool is closed source.

View All Supporting Documents

See also

No results found.



Published on


QuaMC (pronunciation: quamsee) 2-D is effectively a quasi three-dimensional quantum-corrected semiclassical Monte Carlo transport simulator for conventional and non-conventional MOSFET devices. A parameter-free quantum field approach has been developed and utilized quite successfully in order to capture the size-quantization effects in nanoscale MOSFETs. The method is based on a perturbation theory around thermodynamic equilibrium and leads to a quantum field formalism in which the size of an electron depends upon its energy[2,3]. This simulator uses different self-consistent event-biasing schemes for statistical enhancement in the Monte-Carlo device simulations. Enhancement algorithms are especially useful when the device behavior is governed by rare events in the carrier transport process. A bias technique, particularly useful for small devices, is obtained by injection of hot carriers from the boundaries[4]. Regarding the Monte Carlo transport kernel, the explicit inclusion of the longitudinal and transverse masses in the silicon conduction band is done in the program using the Herring-Vogt transformation. Intravalley scattering is limited to acoustic phonons. For the intervalley scattering, both g- and f-phonon processes have been included.


QuaMC 2-D was originally developed at Arizona State University and has recently been ported to various platforms at Purdue University, West Lafayette, IN, USA. More information on QuaMC can be found by contacting Shaikh S. Ahmed.

Sponsored by


Cite this work

Researchers should cite this work as follows:

  • S. Ahmed, C. Ringhofer, D. Vasileska, "Parameter-Free Effective Potential Method for Use in Particle-Based Device Simulations," IEEE Transactions on Nanotechnology, 4, 465 (2005).
  • D. Vasileska and S. S. Ahmed, "Narrow-Width SOI Devices: The Role of Quantum Mechanical Size Quantization Effect and the Unintentional Doping on the Device Operation," IEEE Transactions on Electron Devices, 52, 227 (2005).
  • M. Nedjalkov, S. Ahmed, and D. Vasileska, "A self-consistent event biasing scheme for statistical enhancement�", Journal of Computational Electronics, 3, 305 (2004).
  • Shaikh S. Ahmed; Dragica Vasileska (2011), "QuaMC2D," (DOI: 10.4231/D3542J801).

    BibTex | EndNote

Tags, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.