NanoMOS 2.5 Source Code Download
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Citations Non-affiliated (9) | Affiliated (0)
Non-affiliated authors
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Keng-Ming Liu; L. Register; S.K. Banerjee (2011), "Quantum Transport Simulation of Strain and Orientation Effects in Sub-20 nm Silicon-on-Insulator FinFETs," IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE, 58, 1: pg. 4-10, 10. (DOI: 10.1109/TED.2010.2084090).
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Keng-Ming Liu (2011), "Effects of Quantum Confinement on Electrical Characteristics of 12-nm Silicon-on-Insulator Fin Field-Effect Transistors by Quantum Transport Analysis," Japanese Journal Of Applied Physics, 50, 4: pg. -. (DOI: 10.1143/JJAP.50.04DC19).
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Z. Kordrostami; M. Sheikhi; A. Zarifkar (2011), "Influence Of Channel And Underlap Engineering On The High Frequency And Switching Performance Of CNTFETs," Nanotechnology, IEEE Transactions On, IEEE, 99: pg. 1-7. 1536-125X . (DOI: 10.1109/TNANO.2011.2181998 ).
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E. Farzana; S. Chowdhury; R. Ahmed; M.Z. Rahman Khan (2011), "Performance Analysis Of Nanoscale Double Gate MOSFETs With High-K Gate Stack," Applied Mechanics And Materials, Trans Tech Publ, 110: pg. 1892-1899. (DOI: 10.4028/www.scientific.net/AMM.110-116.1892).
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P Palestri; L Lucci; S Dei Tos; D Esseni; L Selmi (2010), "An improved empirical approach to introduce quantization effects in the transport direction in multi-subband Monte Carlo simulations," Semiconductor Science And Technology, IOP Publishing, 25, 5: pg. 055011-1-055011-10, 04. (DOI: 10.1088/0268-1242/25/5/055011).
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Mohesen Hayati; Majid Seifi; Abbas Rezaei (2010), "Double Gate MOSFET Modeling Based on Adaptive Neuro-Fuzzy Inference System for Nanoscale Circuit Simulation," ETRI Journal, 32, 4: pg. 530-539, 08. (DOI: 10.4218/etrij.10.0109.0707).
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Asif Khan; Md. Ashraf; Anisul Haque (2009), "Wave function penetration effects in double gate metal-oxide-semiconductor field-effect-transistors: impact on ballistic drain current with device scaling," Journal of Applied Physics, AIP, 105, 6: pg. 064505-1-064505-5, 03. 0021-8979. (DOI: 10.1063/1.3079518).
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Wanqiang Chen; L. Register; S.K. Banerjee (2008), "Schrodinger equation Monte Carlo in two dimensions for simulation of nanoscale metal-oxide," Journal of Applied Physics, 103, 2: pg. 24508-, 01. (DOI: 10.1063/1.2809403).
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Keng-Ming Liu; Wanqiang Chen; L. Register; S.K. Banerjee (2008), "Schroedinger equation Monte Carlo in three dimensions for simulation of nanoscale metal-oxide of carrier transport in three-dimensional nanoscale metal oxide semiconductor field-effect transistors," Journal of Applied Physics, 104, 11: pg. -, 01. (DOI: 10.1063/1.3031303).