At the nanometer scale, the concepts of device and material meet, and a new device is a new material and vice versa. While atomistic device representations are novel to device physicists, the semiconductor materials modeling community usually treats infinitely periodic structures. The importance of the appropriate basis set representation that needs to be selected to cover the important physics of semiconductor devices will become evident. These two lectures will not focus on the underlying theories; they will focus on the application of the theories using the nanoelectronic modeling tools NEMO 1- D, NEMO 3-D, and OMEN to realistically extended devices. Topics to be covered are realistic resonant tunneling diodes, quantum dots, nanowires, and Ultra-Thin-Body Transistors.
Researchers should cite this work as follows:
MSEE B012, Purdue University, West Lafayette, IN
|Lecture Number/Topic||Online Lecture||Video||Lecture Notes||Supplemental Material||Suggested Exercises|
|Tutorial 4a: High Bias Quantum Transport in Resonant Tunneling Diodes||View Flash||View||Notes||YouTube
|Tutorial 4b: Introduction to the NEMO3D Tool - Electronic Structure and Transport in 3D||View Flash||View||Notes||YouTube
|Electronic Structure and Transport in 3D - Quantum Dots, Nanowires and Ultra-Thin Body Transistors
|Tutorial 4c: Formation of Bandstructure in Finite Superlattices (Exercise Session)||View Flash||View||Notes||YouTube
|How does bandstructure occur? How large does a repeated system have to be? How does a finite superlattice compare to an infinite superlattice?
|Tutorial 4d: Formation of Bandstructure in Finite Superlattices (Exercise Demo)||View||YouTube
|Demonstration of the
Piece-Wise Constant Potential Barriers Tool.