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Tutorial 4a: High Bias Quantum Transport in Resonant Tunneling Diodes

By Gerhard Klimeck

Electrical and Computer Engineering, Purdue University, West Lafayette, IN

Published on

Abstract

Outline:
  • Resonant Tunneling Diodes - NEMO1D: Motivation / History / Key Insights
  • Open 1D Systems: Transmission through Double Barrier Structures - Resonant Tunneling
  • Introduction to RTDs: Linear Potential Drop
  • Introduction to RTDs: Realistic Doping Profiles
  • Introduction to RTDs: Relaxation Scattering in the Emitter
  • NEMO1D: Full Bandstructure Effects

Sponsored by

“Electronics from the Bottom Up” is an educational initiative designed to bring a new perspective to the field of nano device engineering. It is co-sponsored by the Intel Foundation and the Network for Computational Nanotechnology.

Cite this work

Researchers should cite this work as follows:

  • Gerhard Klimeck (2011), "Tutorial 4a: High Bias Quantum Transport in Resonant Tunneling Diodes," http://nanohub.org/resources/11043.

    BibTex | EndNote

Time

Location

MSEE B012, Purdue University, West Lafayette, IN

Tags

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.