By Eric Pop1, Feifei Lian1

1. University of Illinois at Urbana-Champaign

Simulate the electrical and thermal properties of a graphene field-effect transistor.

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Version 1.1 - published on 19 Aug 2014

doi:10.4231/D3QF8JK5T cite this

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GFET Tool simulates the electrical and thermal characteristics of a graphene field-effect transistor (GFET). The code uses the drift-diffusion approach to calculate the current vs. voltage behavior of the GFET, self-consistently with the temperature of the device. It can also output the carrier density, temperature profile, drift velocity, and electric field along the GFET channel. The code accounts for velocity saturation at high fields, Seebeck effect at contacts, and possible device breakdown due to thermal self-heating. Many parameters (dimensions, mobility, contact resistance) can be set by the user


Eric Pop, Vincent Dorgan, Myung-Ho Bae, Feifei Lian

Sponsored by

National Science Foundation, Office of Naval Research, and


[1] V.E. Dorgan, M.-H. Bae, E. Pop, "Mobility and Saturation Velocity in Graphene on SiO2," Appl. Phys. Lett. 97, 082112 (2010)

[2] M.-H. Bae, Z.-Y. Ong, D. Estrada, E. Pop, "Imaging, Simulation, and Electrostatic Control of Power Dissipation in Graphene Devices," Nano Letters 10, 4787, (2010)

[3] K. Grosse, M.-H. Bae, F. Lian, E. Pop, W.P. King, "Nanoscale Joule heating, Peltier cooling and current crowding at graphene-metal contacts," Nature Nanotechnology 6, 287 (2011)

Cite this work

Researchers should cite this work as follows:

  • Eric Pop; Feifei Lian (2014), "GFET Tool," (DOI: 10.21981/D3QF8JK5T).

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