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By Eric Pop1, Feifei Lian1

1. University of Illinois at Urbana-Champaign

Simulate the electrical and thermal properties of a graphene field-effect transistor.

Launch Tool

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Archive Version 1.0
Published on 14 Jul 2011
Latest version: 1.1. All versions

doi:10.4231/D36M33379 cite this

This tool is closed source.



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GFET Tool simulates the electrical and thermal characteristics of a graphene field-effect transistor (GFET). The code uses the drift-diffusion approach to calculate the current vs. voltage behavior of the GFET, self-consistently with the temperature of the device. It can also output the carrier density, temperature profile, drift velocity, and electric field along the GFET channel. The code accounts for velocity saturation at high fields, Seebeck effect at contacts, and possible device breakdown due to thermal self-heating. Many parameters (dimensions, mobility, contact resistance) can be set by the user

Tags, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.