Please help us continue to improve nanoHUB operation and service by completing our survey - http://bit.ly/nH-survey14. Thank you - we appreciate your time. close

Support

Support Options

Submit a Support Ticket

 

Lecture 3: Resistance-Ballistic to Diffusive

By Mark Lundstrom

Electrical and Computer Engineering, Purdue University, West Lafayette, IN

Published on

Abstract

The resistance of a ballistic conductor and concepts such as the quantum contact resistance are introduced and discussed. The results are then generalized to treat transport all the way from the ballistic to diffusive regimes. We will show how to treat bulk conductors (electrons free to move in 3D) and will also discuss 2D conductors (electrons free to move in a plane) and 1D conductors (electrons free to move along a wire).

Outline:

  1. Review
  2. 2D ballistic resistors
  3. 2D diffusive resistors
  4. Discussion
  5. Summary

Sponsored by

Electronics from the Bottom Up” is an educational initiative designed to bring a new perspective to the field of nano device engineering. It is co-sponsored by the Intel Foundation and the Network for Computational Nanotechnology.

Cite this work

Researchers should cite this work as follows:

  • Mark Lundstrom (2011), "Lecture 3: Resistance-Ballistic to Diffusive," http://nanohub.org/resources/11746.

    BibTex | EndNote

Time

Location

Burton Morgan 121, Purdue University, West Lafayette, IN

Tags

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.