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Home › Groups › M. Ashraful Alam Research Group › Resources › Publications › Theory and characterization of random defect formation and its implication in variability of nanoscale transistors › Supporting Docs

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Theory and characterization of random defect formation and its implication in variability of nanoscale transistors

By Ahmad Ehteshamul Islam

University of Illinois at Urbana-Champaign

M. Ashraful Alam Research Group

This resource belongs to the M. Ashraful Alam Research Group group.

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Supporting Docs

(PDF, 5.25 Mb) Final_Thesis_AEI.pdf

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