Comparison of strain relaxation in epitaxial Si0.3Ge0.7 films grown on Si(001) and Ge(001)
Surface and interfacial strain have been computed for SiGe thin films grown by UHVCVD,based on measurements via transmission electron microscopy and Raman spectroscopy.
The authors wish to thank Dr Leanne Henry and Kenneth Vaccaro of AFRL for their assistance with epitaxial growth and
Paul Nitishin of the MIT Lincoln Laboratory for facilitating the high resolution work.
Financial support was provided by the US Air Force Palace Knight program.
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