Surface and interfacial strain have been computed for SiGe thin films grown by UHVCVD,based on measurements via transmission electron microscopy and Raman spectroscopy.

Coauthors: R. Naik, G. Auner, C. Kota, U. Rao

Researchers should cite this work as follows:

• Brian Demczyk (2011), "Comparison of strain relaxation in epitaxial Si0.3Ge0.7 films grown on Si(001) and Ge(001)," https://nanohub.org/resources/12252.

1. interface structure
2. Interfacial strain
3. material science
4. nanophotonics
5. thin film growth
6. thin films