ECE 656 Lecture 36: High-field Transport

By Mark Lundstrom

Electrical and Computer Engineering, Purdue University, West Lafayette, IN

Published on

Abstract

Outline:
  1. Brief Introduction
  2. Current Equation
  3. Qualitative features of high field transport
  4. Saturated velocity
  5. Electron temperature model
  6. Survey of results
  7. Quick Summary

Cite this work

Researchers should cite this work as follows:

  • Mark Lundstrom (2012), "ECE 656 Lecture 36: High-field Transport," http://nanohub.org/resources/12711.

    BibTex | EndNote

Location

EE 115, Purdue University, West Lafayette, IN

Tags

ECE 656 Lecture 36: High-field Transport
  • ECE 656 Lecture 36: High-field Transport 1. ECE 656 Lecture 36: High-field… 0
    00:00/00:00
  • velocity vs. field characteristics 2. velocity vs. field characteris… 29
    00:00/00:00
  • outline 3. outline 126.66666666666667
    00:00/00:00
  • current equation 4. current equation 137.83333333333334
    00:00/00:00
  • current equation: bulk semiconductor 5. current equation: bulk semicon… 253.7
    00:00/00:00
  • field-dependent mobility 6. field-dependent mobility 351.6
    00:00/00:00
  • outline 7. outline 438.06666666666666
    00:00/00:00
  • covalent vs. polar semiconductors 8. covalent vs. polar semiconduct… 443.63333333333333
    00:00/00:00
  • average energy vs. electric field 9. average energy vs. electric fi… 582.76666666666665
    00:00/00:00
  • average velocity vs. electric field 10. average velocity vs. electric … 676.93333333333328
    00:00/00:00
  • mobility and diffusion coefficient 11. mobility and diffusion coeffic… 754.7
    00:00/00:00
  • outline 12. outline 1025.2333333333334
    00:00/00:00
  • can we calculate υSAT? 13. can we calculate υSAT? 1126.6
    00:00/00:00
  • can we calculate υSAT? 14. can we calculate υSAT? 1305.9666666666667
    00:00/00:00
  • saturation velocoty 15. saturation velocoty 1389.3
    00:00/00:00
  • outline 16. outline 1460.5333333333333
    00:00/00:00
  • electron temperature approach 17. electron temperature approach 1473.4
    00:00/00:00
  • electron temperature approach 18. electron temperature approach 1577.6666666666667
    00:00/00:00
  • electron temperature approach 19. electron temperature approach 1638.1666666666667
    00:00/00:00
  • aside: neglect of the drift energy 20. aside: neglect of the drift en… 1794.2333333333334
    00:00/00:00
  • electron temperature model 21. electron temperature model 1985.9666666666667
    00:00/00:00
  • the procedure 22. the procedure 2169.6666666666665
    00:00/00:00
  • result (for silicon) 23. result (for silicon) 2242.1666666666665
    00:00/00:00
  • velocity vs. field characteristic 24. velocity vs. field characteris… 2316.5
    00:00/00:00
  • high- field diffusion 25. high- field diffusion 2403.5
    00:00/00:00
  • outline 26. outline 2461.1
    00:00/00:00
  • <111> Silicon: low-field 27. <111> Silicon: low-field 2485.7666666666669
    00:00/00:00
  • <111> Silicon: high-field 28. <111> Silicon: high-field 2605.9333333333334
    00:00/00:00
  • <111> Silicon: high-field 29. <111> Silicon: high-field 2712.5666666666666
    00:00/00:00
  • suggested exercises 30. suggested exercises 2783.2666666666669
    00:00/00:00
  • <100> Silicon: high-field 31. <100> Silicon: high-field 2795.2
    00:00/00:00
  • <100> Silicon: high-field 32. <100> Silicon: high-field 2822.8
    00:00/00:00
  • <100> Silicon: high-field 33. <100> Silicon: high-field 2872.4
    00:00/00:00
  • outline 34. outline 2885.4666666666667
    00:00/00:00
  • summary 35. summary 2889.4
    00:00/00:00
  • questions 36. questions 2926
    00:00/00:00