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Modeling of semiconductor nanostructures and semiconductor–electrolyte interfaces

By Stefan Birner

nextnano GmbH



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In this work, systems that consist of a combination of semiconductor materials and liquids are calculated. These biosensors have a solid–electrolyte interface, and the charges in the solid and in the electrolyte are coupled to each other through the Poisson–Boltzmann equation, which is self-consistently solved together with the Schrödinger equation. An extension of the Poisson–Boltzmann model allows one to distinguish between hydrophobic and hydrophilic interfaces. The distribution of ion species at the solid–electrolyte interface is described by ion specific potentials of mean force. Applications include the calculation of graphene and diamond based biosensors, and a silicon based protein sensor. Further topics discussed in this work are HgTe–CdTe and InAs–GaSb superlattices, quantum dot crystals, ballistic quantum transport calculations, as well as mobility calculations of charge carriers.

Cite this work

Researchers should cite this work as follows:

  • S. Birner, "Modeling of semiconductor nanostructures and semiconductor–electrolyte interfaces", Selected Topics of Semiconductor Physics and Technology (G. Abstreiter, M.-C. Amann, M. Stutzmann, and P. Vogl, eds.), Vol. 135, Verein zur Förderung des Walter Schottky Instituts der Technischen Universität München e.V., München, 239 pp. (2011), ISBN 978-3-941650-35-0
  • Stefan Birner (2012), "Modeling of semiconductor nanostructures and semiconductor–electrolyte interfaces,"

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