On the Two to Three Dimensional Growth Transition in Strained Silicon Germanium Thin Films
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Utilizing a model adapted from classical nucleation theory , we calculate a "critical thickness" for island formation, taking into account the surface energies of the deposit and the substrate and the elastic modulus of the deposit, to which experimental results for CVD grown silicon germanium thin films are compared.
Researchers should cite this work as follows:
Brian Demczyk (2012), "On the Two to Three Dimensional Growth Transition in Strained Silicon Germanium Thin Films," https://nanohub.org/resources/13003.