Support Options

Submit a Support Ticket


On the Two to Three Dimensional Growth Transition in Strained Silicon Germanium Thin Films

By Brian Demczyk




Published on


Utilizing a model adapted from classical nucleation theory [8], we calculate a "critical thickness" for island formation, taking into account the surface energies of the deposit and the substrate and the elastic modulus of the deposit, to which experimental results for CVD grown silicon germanium thin films are compared.


Coauthors:A. H. King, R. J. Gambino


Transmission electron microscopy was performed at the U.S. Air Force Research Laboratory at Hanscom AFB, MA and at the MIT Lincoln Laboratory with the assistance of Mr. Paul Nitishin.

Sponsored by

Work was funded by a United States Air Force Palace Knight fellowship.

Tags, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.