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NanoMOS

By Zhibin Ren1, Sebastien Goasguen1, Akira Matsudaira2, Shaikh S. Ahmed3, Kurtis Cantley4, Yang Liu5, Mark Lundstrom1, Xufeng Wang1, Himadri Pal1

1. Purdue University 2. University of Illinois at Urbana-Champaign 3. Southern Illinois University Carbondale 4. University of Texas at Dallas 5. IBM

2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs

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Version 4.0 - published on 23 Jun 2011

doi:10254/nanohub-r1305.12 cite this

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