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By Zhibin Ren1, Sebastien Goasguen1, Akira Matsudaira2, Shaikh S. Ahmed3, Kurtis Cantley4, Yang Liu5, Yunfei Gao1, Xufeng Wang1, Mark Lundstrom1
1. Purdue University 2. University of Illinois at Urbana-Champaign 3. Southern Illinois University Carbondale 4. University of Texas at Dallas 5. IBM
2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs
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Version 4.0.4 - published on 22 Mar 2016
doi:10.4231/D34746S60 cite this
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