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MOS-C VFB Calculation: Comparison of Theoretical and Simulation Values (Instructor Copy)

By Stella Quinones

University of Texas at El Paso

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The flatband voltage is calulated based on device physics theory and is compared to the value determined from the simulation of a MOS-Capacitor using the MOSCap simulation tool on the website. By completing this exercise, the student is able to compare the mathematical model of the gate voltage of a MOS-Capacitor to the interpretation of the energy band diagram of a MOS-Capacitor. The example includes the simulation of a MOS-Capacitor with a p-type substrate and an n+poly silicon gate.

Tags, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.