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MOS-C VFB Calculation: Comparison of Theoretical and Simulation Values

By Stella Quinones

University of Texas at El Paso

UTEP NCN Teaching Materials

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Abstract

The flatband voltage is calulated based on device physics theory and is compared to the value determined from the simulation of a MOS-Capacitor using the MOSCap simulation tool on the nanoHUB.org website. By completing this exercise, the student is able to compare the mathematical model of the gate voltage of a MOS-Capacitor to the interpretation of the energy band diagram of a MOS-Capacitor. The example includes the simulation of a MOS-Capacitor with a p-type substrate and an n+poly silicon gate.

Bio

Dr. Stella Quinones is an Associate Professor of Electrical and Computer Engineering at The University of Texas at El Paso (UTEP) where she has been a faculty member for the past 13 years. She held the Forest O. and Henrietta Lewis Professorship in Electrical Engineering and is a 2010 UT Regents' Outstanding Teaching Award recipient and also received the 2011 Distinguished Achievement Award for Teaching Excellence. Her current research areas include planar and nano-scale selective CdTe deposition on CdTe(111), Si(100), Si(211) and SOI substrates using a conventional and state-of-the-art close-spaced sublimation (CSS) technique for applications related to solar cells and infrared detectors.

Sponsored by

This project is supported by NSF NCN Grant EEC-0634750.

Cite this work

Researchers should cite this work as follows:

  • Stella Quinones (2012), "MOS-C VFB Calculation: Comparison of Theoretical and Simulation Values," http://nanohub.org/resources/13059.

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