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NanoMOS

2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs

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Archive Version 3.5
Published on 23 Feb 2009, unpublished on 23 Jun 2009
Latest version: 4.0.3. All versions

doi:10.4231/D36688J31 cite this

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Abstract

nanoMOS

nanoMOS is a 2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs. A choice of three transport models is currently available (drift-diffusion, classical ballistic, and quantum ballistic). The transport models treat quantum effects in the confinement direction exactly and the names indicate the technique used to account for carrier transport along the channel. Each of these transport models is solved self-consistently with Poisson’s equation. Several internal quantities such as subband profiles, subband areal electron densities, potential profiles and I-V information can be obtained from the source code.


Major nanoMOS versions in the past

  • nanoMOS 1.0

Original nanoMOS code for silicon MOSFETs. Written in Matlab and developed by Zhibin Ren in 2000.

  • nanoMOS 2.0

Addition of Rappture interface support on nanohub.org

  • nanoMOS 3.0

Support for III-V materials in semi-classical and quantum ballistic transport models.

  • nanoMOS 3.5

Support for additional materials, enhanced drift-diffusion capabilities, and extensions and code restructuring for developers.


nanoMOS related materials

nanoMOS 3.5 tutorial

nanoMOS 2.0 tutorial

An introduction on nanoMOS 2.0 and related simulators on nanoHUB

nanoMOS 3.0 tutorial

Articles

  • Zhibin Ren, Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, and Mark S. Lundstrom “nanoMOS 2.5: A Two -Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs,” IEEE Trans. Electron. Dev., special issue on Nanoelectronics, Vol. 50, pp. 1914-1925, 2003

Thesis related to nanoMOS

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