This tool version is unpublished and cannot be run. If you would like to have this version staged, you can put a request through HUB Support.
nanoMOS is a 2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs. A choice of three transport models is currently available (drift-diffusion, classical ballistic, and quantum ballistic). The transport models treat quantum effects in the confinement direction exactly and the names indicate the technique used to account for carrier transport along the channel. Each of these transport models is solved self-consistently with Poisson’s equation. Several internal quantities such as subband profiles, subband areal electron densities, potential profiles and I-V information can be obtained from the source code.
Major nanoMOS versions in the past
- nanoMOS 1.0
Original nanoMOS code for silicon MOSFETs. Written in Matlab and developed by Zhibin Ren in 2000.
- nanoMOS 2.0
Addition of Rappture interface support on nanohub.org
- nanoMOS 3.0
Support for III-V materials in semi-classical and quantum ballistic transport models.
- nanoMOS 3.5
Support for additional materials, enhanced drift-diffusion capabilities, and extensions and code restructuring for developers.
nanoMOS related materials
nanoMOS 3.5 tutorial
nanoMOS 2.0 tutorial
An introduction on nanoMOS 2.0 and related simulators on nanoHUB
nanoMOS 3.0 tutorial
- Zhibin Ren, Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, and Mark S. Lundstrom “nanoMOS 2.5: A Two -Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs,” IEEE Trans. Electron. Dev., special issue on Nanoelectronics, Vol. 50, pp. 1914-1925, 2003
Thesis related to nanoMOS
- Zhibin Ren, “Nanoscale MOSFETS: Physics, Simulation and Design”, 2001
- Ramesh Venugopal, “Modeling Quantum Transport in Nanoscale Transistors”, 2003
- Kurtis Cantley, “Performance Potential of III-V Materials in Nanoscale Transistors – a Device Simulation Perspective”, 2007
Other related materials