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nanoMOS 3.0

2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs

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Archive Version 3.0
Published on 27 Feb 2006, unpublished on 09 Jan 2008
Latest version: 4.0.3. All versions

doi:10.4231/D3PK0716F cite this

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NanoMOS is a 2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs. A choice of five transport models is available (drift-diffusion, classical ballistic, energy transport, quantum ballistic, and quantum diffusive). The transport models treat quantum effects in the confinement direction exactly and the names indicate the technique used to account for carrier transport along the channel. Each of these transport models is solved self-consistently with Poisson's equation. Several internal quantities such as subband profiles, subband areal electron densities, potential profiles and I-V information can be obtained from the source code.

NanoMOS 3.0 includes an improved treatment of carrier scattering. (Errors in self energy and the LDOS plot were also corrected.)


nanoMOS 1.0 was written in Matlab and developed by Zhibin Ren as part of his doctoral work at Purdue University. The development of NanoMOS was supported by the Semiconductor Research Corporation and by the Army Research Office through a Defense University Research Initiative on Nanotechnology grant.

Cite this work

Researchers should cite this work as follows:

  • Zhibin Ren, Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, and Mark S. Lundstrom "nanoMOS 2.5: A Two -Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs," IEEE Trans. Electron. Dev., special issue on Nanoelectronics, Vol. 50, pp. 1914-1925, 2003.

  • (2014), "nanoMOS 3.0," (DOI: 10.4231/D3PK0716F).

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