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nanoMOS 3.0

2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs

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Archive Version 3.0
Published on 27 Feb 2006, unpublished on 09 Jan 2008
Latest version: 4.0.3. All versions

doi:10.4231/D3PK0716F cite this

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Abstract

NanoMOS is a 2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs. A choice of five transport models is available (drift-diffusion, classical ballistic, energy transport, quantum ballistic, and quantum diffusive). The transport models treat quantum effects in the confinement direction exactly and the names indicate the technique used to account for carrier transport along the channel. Each of these transport models is solved self-consistently with Poisson's equation. Several internal quantities such as subband profiles, subband areal electron densities, potential profiles and I-V information can be obtained from the source code.

NanoMOS 3.0 includes an improved treatment of carrier scattering. (Errors in self energy and the LDOS plot were also corrected.)

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