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By Sebastien Goasguen1, Mark Lundstrom1, Akira Matsudaira2, Kurtis Cantley3, Shaikh S. Ahmed4

1. Purdue University 2. University of Illinois at Urbana-Champaign 3. Boise State University 4. Southern Illinois University Carbondale

2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs

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Archive Version 3.0.1
Published on 09 Jan 2008, unpublished on 09 May 2008
Latest version: 4.0.3. All versions

doi:10.4231/D3JS9H72R cite this

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NanoMOS is a 2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs. A choice of five transport models is available (drift-diffusion, classical ballistic, energy transport, quantum ballistic, and quantum diffusive). The transport models treat quantum effects in the confinement direction exactly and the names indicate the technique used to account for carrier transport along the channel. Each of these transport models is solved self-consistently with Poisson's equation. Several internal quantities such as subband profiles, subband areal electron densities, potential profiles and I-V information can be obtained from the source code.

NanoMOS 3.0 includes an improved treatment of carrier scattering. (Errors in self energy and the LDOS plot were also corrected.)

Tags, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.