This tool version is unpublished and cannot be run. If you would like to have this version staged, you can put a request through HUB Support.
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NanoMOS is a 2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs. A choice of five transport models is available (drift-diffusion, classical ballistic, energy transport, quantum ballistic, and quantum diffusive). The transport models treat quantum effects in the confinement direction exactly and the names indicate the technique used to account for carrier transport along the channel. Each of these transport models is solved self-consistently with Poisson’s equation. Several internal quantities such as subband profiles, subband areal electron densities, potential profiles and I-V information can be obtained from the source code.
NanoMOS 3.0 includes an improved treatment of carrier scattering. (Errors in self energy and the LDOS plot were also corrected.)
nanoFORGE project with latest source code download