You must login before you can run this tool.
Nanowire
Simulate 3D nanowire transport in the effective mass approximation with phonon scattering and 3D Poisson self-consistent solution
Version 3.02 - published on 05 May 2011
doi:10254/nanohub-r1307.8 cite this
This tool is closed source.
| Category | Tools | ||||||||
|---|---|---|---|---|---|---|---|---|---|
| Abstract | Silicon nanowire transistors are promising device structures for future integrated circuits. Short channel effects are becoming more and more important in the nanoscale regime, and therefore effective gate control will be necessary to achieve good device performance.
Devices based on silicon nanowires can be manufactured with multigate and gate-all-around transistors and you can explore them with this tool.
In contrast to planar MOSFETs which have uniform charge and potential profiles in the transverse direction (i.e., normal to both the gate and the source-drain direction), a silicon nanowire transistor has a genuinely 3D distribution of electron density and electrostatic potential. Therefore self-consistent 3D simulations are mandatory, and you run them with this tool. One of the transport models assumes ballistic transport, which gives the upper performance limit of the devices. The effective-mass mode space approach (either coupled or uncoupled) produces high computational efficiency that makes this simulator practical for extensive device simulation and design. In the previous version of nanowire tool, it can only dealt with ballistic transport. However, the currently fabricated nanowire transistors usually have length of several hundreds of nanowires, which is obviously in the region of dissipative transport. Even in the region of sub-100 nm, the current is far below its ballistic limit, only 50% of ballistic limit. All of these evidences indicate the important role of phonon scattering in the carrier transport of nanowire transistor. This is the main driven force prompting us to release this new version. In this new version of nanowire tool, we assume that the phonon system is in thermal equilibrium state, and we use the self-consistent Born approximation to calculate phonon-electron interaction. For intra-valley phonon scattering self-energy, although there exists the anisotropy of the deformation-potential interaction between electrons and acoustic phonons, we assume the usual scalar deformation potential for the intra-valley phonon scattering. If we use the scalar deformation potential, the matrix element vanishes for the transverse acoustic modes, and the matrix element for the longitudinal acoustic (LA) mode remains. Since the energy of LA phonon is small, we treat it as elastic scattering in our program. Electron transitions between states in two different equivalent valleys can be induced by both acoustic and optical phonon scatterings. In our program, we also take this kind of inter-valley phonon scattering into account. Since in this new version, we introduce phonon scattering into it, the computation complexity increases thus lead to a much longer simulation time. In order to reduce the simulation time, the C++ program is parallelized using MPI and OpenMP. The mode space approach treats quantum confinement and transport separately. The simulations you can perform consist of the following steps:
|
||||||||
| Powered by | SIMSN |
||||||||
| Credits | This tool is based on the work of Hong-Hyun Park.He has developed this effective mass NEGF simulator SIMSN in his Ph.D period. Lang Zeng has contribution to the GUI development.
|
||||||||
| Sponsored by | NCN@Purdue, MSD FCRP, SRC One of the authors (Lang Zeng) is sponsored by Chinese Scholarship Council. |
||||||||
| Publications | |||||||||
| Cite this work | Researchers should cite this work as follows: |
||||||||
| Tags |