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Nanowire
Simulate 3D nanowire transport in the effective mass approximation and 3D Poisson solution
Version 2.1 - published on 17 Jul 2009
DOI: 10254/nanohub-r1307.5 cite this
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| Description | Silicon nanowire transistors are promising device structures for future integrated circuits. Short channel effects are becoming more and more important in the nanoscale regime, and therefore effective gate control will be necessary to achieve good device performance.
Devices based on silicon nanowires can be manufactured with multigate and gate-all-around transistors and you can explore them with this tool.
In contrast to planar MOSFETs which have uniform charge and potential profiles in the transverse direction (i.e., normal to both the gate and the source-drain direction), a silicon nanowire transistor has a genuinely 3D distribution of electron density and electrostatic
potential. Therefore self-consistent 3D simulations are mandatory, and you run them with this tool. One of the transport models assumes ballistic transport, which gives the upper performance limit of the devices. The effective-mass mode space approach (either coupled or uncoupled) produces high computational efficiency that makes this
simulator practical for extensive device simulation and
design. Scattering is treated by so-called Büttiker probes, which was previously used in metal-oxide-semiconductor field effect transistor simulations. The effects of scattering on both internal device
characteristics and terminal currents can be examined, which enables our simulator to be used for the exploration of realistic performance limits of silicon-nanowire transistors.
The mode space approach treats quantum confinement and transport separately. The simulations you can perform consist of the following steps:
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| Credits | This tool is based on the work of Jing Wang, Eric Polizzi, and Clemens Heitzinger. |
| Cite this work | Researchers should cite this work as follows:
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