The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the performance of nanoscale CMOS devices. Novel process techniques, such as ALD, high-k dielectrics,...

Researchers should cite this work as follows:

• Anisur Rahman (2006), "Exploring New Channel Materials for Nanoscale CMOS," https://nanohub.org/resources/1315.

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1. algorithms
2. ballistic MOSFET
3. materials science
4. nanoelectronics
5. nanotransistors
6. NEGF
7. Ph.D. thesis