Carbon has been the material of choice over the last few years when it comes to exploratory nano-devices and applications. Carbon nanotubes and graphene, both have proven to exhibit outstanding electrical properties that are worth harvesting. My presentation will elucidate why carbon based materials are an excellent choice for a wide variety of electronic applications.
In particular, I will discuss two distinct topics: In the first part of my talk I will present results on carbon nanotubes focusing on high performance computing with the aim to replace silicon in logic device applications. Specifically, the ballistic transport regime that has been reached with the shortest nanotube devices fabricated to date will be discussed in details. In the second part of the talk, I will discuss important aspects of electronic transport in graphene devices. The first direct measurement of quantum capacitance of graphene will be shown followed by a brief discussion of its indication to device scaling and a potential application as a varactor. Making a good contact to graphene remains a big challenge in the field. I will present our understanding of the contact interface based on measurements of a unique dual gate device structure which allows us to extract both contact coupling strength and contact doping level. Dirac point is often used as a measure of doping level in graphene devices. I will show that it is not a valid indicator for graphene devices with short channel effects.
Researchers should cite this work as follows:
Physics, Room 203, Purdue University, West Lafayette, IN
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