A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET simulations using the nanoHUB MOSFET tool.

Dr. Stella Quinones is an Associate Professor of Electrical and Computer Engineering at The University of Texas at El Paso (UTEP) where she has been a faculty member for the past 13 years. She held the Forest O. and Henrietta Lewis Professorship in Electrical Engineering and is a 2010 UT Regents' Outstanding Teaching Award recipient and also received the 2011 Distinguished Achievement Award for Teaching Excellence. Her current research areas include planar and nano-scale selective CdTe deposition on CdTe(111), Si(100), Si(211) and SOI substrates using a conventional and state-of-the-art close-spaced sublimation (CSS) technique for applications related to solar cells and infrared detectors.

This project is supported by NSF CCLI Grant DUE-0942977 and NSF NCN Grant EEC-0634750.

Researchers should cite this work as follows:

• Stella Quinones; Jose Valdez (2012), "MOSFET Design Simulation I," https://nanohub.org/resources/13398.

1. ID-VD Curves
2. ID-VG Curves
3. MOSFET
4. nanoelectronics
5. simulaiton
6. threshold