Support

Support Options

Submit a Support Ticket

 

Semi-Analytical Depletion Width Evaluated by Self-Consistent Schrödinger–Poisson Pair Calculations

By Che-Sheng Chung

National Taiwan University of Science and Technology

Category

Papers

Published on

Abstract

A self-consistent calculation establishes a bulk built-in potential by applying a DC bias to a gate/insulators/semiconductor (GIS) structure of a metal–oxide–semiconductor field-effect transistor (MOSFET). The width of a semi-analytical depletion layer near the interface of the GIS structure of an n-type MOSFET (nMOSFET) can be extracted by self-consistent calculation. The grand canonical ensemble improves the quantitative calculation for the theoretical evaluation of the self-consistent calculation. It is possible that a new approximation establishing the self-consistent potential appropriately merges with a classical transport model at low temperatures because of minimizing quantum calculations in a momentum space.

Bio

Che-Sheng Chung

References

1) F. Stern and W. E. Howard: Phys. Rev.163 (1967) 816.
2) F. Stern: Phys. Rev. B5 (1972) 4891.
3) S. Selberherr: IEEE Trans. Electron Devices36 (1989) 1464.
4) E. Gnani, S. Reggiani, M.Rudan, and G.Baccarani: Proc. 34thESSDERC, 2004, p. 177.
5) F. Rana, S. Tiwari, and D. Buchanan: Appl. Phys. Lett.69 (1996) 1104.
6) S. A. Hareland, S. Krishnamurthy, C.-F. Yeap, K. Hasnat, A. F. Tasch, Jr., and C. M. Maziar: IEEE Trans. Electron Devices43 (1996) 90.
7) S. V. Walstra and C.-T. Sah: IEEE Trans. Electron Devices44 (1997) 1136.
8) T. Janik and B. Majkusiak: IEEE Trans. Electron Devices45 (1998) 1263.
9) F. Assad, Z. Ren, D. Vasileska, S. Datta, and M. S. Lundstrom: IEEE Trans. Electron Devices47 (2000) 232.
10) C.-S. Chung and S.-L. Jang: 4th IEEE INEC2011, 2011, G12-4, p. 34 (submitted to Solid-State Electron. Special Issue: INEC2011).
11) J. P. Colinge, A. J. Quinn, L. Floyd, G. Redmond, J. C. Alderman, W. Xiong, C. R. Cleavelin, T. Schulz, K. Schruefer, G. Knoblinger, and P. Patruno: IEEE Electron Device Lett.27 (2006) 120.
12) F.Boeuf,X.Jehl,M.Sanquer,andT.Skotnicki: IEEETrans.Nanotechnol. 2 (2003) 144.
13) T. Ando, A. B. Fowler, and F. Stern: Rev. Mod. Phys.54 (1982) 437.
14) R. Seiwatz and M. Green: J. Appl. Phys.29 (1958) 1034.
15) C. Moglestue: J. Appl. Phys.59 (1986) 3175.
16) S. Takagi, T. Iisawa, T. Tezuka, T. Numata, S. Nakaharai, N. Hirashita, Y. Moriyama, K. Usuda, E. Toyoda, S. Dissanayake, M. Shichijo, R. Nakane, S. Sugahara, M. Takenaka, and N. Sugiyama: IEEE Trans. Electron Devices55 (2008) 21.
17) Y. Ohkura: Solid-State Electron.33 (1990) 1581.
18) D.Vasileska, S.S.Ahmed,and G.Klimeck: https://nanohub.org/resources/4443

Publications

2011 The Japan Society of Applied Physics

Cite this work

Researchers should cite this work as follows:

  • Che-Sheng Chung (2012), "Semi-Analytical Depletion Width Evaluated by Self-Consistent Schrödinger–Poisson Pair Calculations," http://nanohub.org/resources/13609.

    BibTex | EndNote

Tags

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.