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Negative Bias Temperature Instability (NBTI) in p-MOSFETs: The Impact of Gate Insulator Processes (Part 2 of 3)

By Souvik Mahapatra

Electrical Engineering, IIT Bombay, India

Published on


This presentation is part 2 on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON gate insulators in order to keep up with Moore's scaling law. The issue is still relevant and also very much exits in the recently introduced HKMG gate stacks.

In the 2nd part, the impact of gate insulator processes on NBTI, especially the role of Hydrogen, Nitrogen and Fluorine will be discussed. We have extensively used the ultra-fast method to study NBTI parametric degradation in FETs having a wide variety of gate insulator processes and this will be covered next. As we shall see, NBTI is strongly gate insulator process dependent and this is a crucial information to understand the underlying physical mechanism of NBTI and its optimization via suitable process changes.

Cite this work

Researchers should cite this work as follows:

  • Souvik Mahapatra (2012), "Negative Bias Temperature Instability (NBTI) in p-MOSFETs: The Impact of Gate Insulator Processes (Part 2 of 3),"

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  1. Unable to find presentation., a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.