Negative Bias Temperature Instability (NBTI) in p-MOSFETs: The Impact of Gate Insulator Processes (Part 2 of 3)

By Souvik Mahapatra

Electrical Engineering, IIT Bombay, India

Published on

Abstract

This presentation is part 2 on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON gate insulators in order to keep up with Moore's scaling law. The issue is still relevant and also very much exits in the recently introduced HKMG gate stacks.

In the 2nd part, the impact of gate insulator processes on NBTI, especially the role of Hydrogen, Nitrogen and Fluorine will be discussed. We have extensively used the ultra-fast method to study NBTI parametric degradation in FETs having a wide variety of gate insulator processes and this will be covered next. As we shall see, NBTI is strongly gate insulator process dependent and this is a crucial information to understand the underlying physical mechanism of NBTI and its optimization via suitable process changes.

Cite this work

Researchers should cite this work as follows:

  • Souvik Mahapatra (2012), "Negative Bias Temperature Instability (NBTI) in p-MOSFETs: The Impact of Gate Insulator Processes (Part 2 of 3)," http://nanohub.org/resources/13611.

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Negative Bias Temperature Instability (NBTI) in p-MOSFETs: The Impact of Gate Insulator Processes (Part 2 of 3)
  • Negative Bias Temperature Instability (NBTI) in p-MOSFETs (Part 2 of 3) 1. Negative Bias Temperature Inst… 0
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  • Outline 2. Outline 20.649999618530273
    00:00/00:00
  • Outline 3. Outline 83.6200008392334
    00:00/00:00
  • Impact of Oxide Type and PMA 4. Impact of Oxide Type and PMA 98.100000381469727
    00:00/00:00
  • Impact of Backend Processes 5. Impact of Backend Processes 154.85000038146973
    00:00/00:00
  • Impact of Backend Processes 6. Impact of Backend Processes 242.07000160217285
    00:00/00:00
  • Role of Hydrogen (NBTI Degradation & Recovery) 7. Role of Hydrogen (NBTI Degrada… 317.08000373840332
    00:00/00:00
  • Impact of Nitrogen 8. Impact of Nitrogen 438.65000343322754
    00:00/00:00
  • Si/SiON Interfacial N Driven NBTI 9. Si/SiON Interfacial N Driven N… 484.82000160217285
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  • Role of Nitrogen 10. Role of Nitrogen 556.25000190734863
    00:00/00:00
  • Impact of Fluorine 11. Impact of Fluorine 668.12000465393066
    00:00/00:00
  • Summary 12. Summary 699.33000373840332
    00:00/00:00
  • Outline 13. Outline 784.58000373840332
    00:00/00:00
  • Measured UF-OTF IDLIN Degradation 14. Measured UF-OTF IDLIN Degradat… 840.98000526428223
    00:00/00:00
  • PNO: Impact of Post Nitridation Anneal 15. PNO: Impact of Post Nitridatio… 943.50000190734863
    00:00/00:00
  • PNO: Impact of Nitridation Dose 16. PNO: Impact of Nitridation Dos… 1028.8399982452393
    00:00/00:00
  • Time Exponent: Process / Material Dependence 17. Time Exponent: Process / Mater… 1079.8699970245361
    00:00/00:00
  • Temperature Activation of Degradation 18. Temperature Activation of Degr… 1214.2899951934815
    00:00/00:00
  • Oxide Field Dependence of Degradation 19. Oxide Field Dependence of Degr… 1305.899995803833
    00:00/00:00
  • Field Acceleration Factor: Process Dependence 20. Field Acceleration Factor: Pro… 1422.9309940338135
    00:00/00:00
  • Correlation: Process Dependence of n, EA, G 21. Correlation: Process Dependenc… 1480.9609928131104
    00:00/00:00
  • Hi-K/MG vs. SiON: Role of Nitrogen 22. Hi-K/MG vs. SiON: Role of Nitr… 1544.6409931182861
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  • Hi-K/MG vs. SiON: T Dependent Transients 23. Hi-K/MG vs. SiON: T Dependent … 1650.2409915924072
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  • Flicker Noise Measurement (Hi-K/MG) 24. Flicker Noise Measurement (Hi-… 1746.7409915924072
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  • Hi-K/MG vs. SiON: Time Exponent (n) 25. Hi-K/MG vs. SiON: Time Exponen… 1833.4309940338135
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  • Hi-K/MG vs. SiON: Temperature Activation (EA) 26. Hi-K/MG vs. SiON: Temperature … 1905.6519947052002
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  • Hi-K/MG vs. SiON: Field Acceleration (G) 27. Hi-K/MG vs. SiON: Field Accele… 1962.331995010376
    00:00/00:00
  • Role of Nitrogen 28. Role of Nitrogen 2044.6219959259033
    00:00/00:00
  • Short Time Degradation: Different Devices 29. Short Time Degradation: Differ… 2136.0119953155518
    00:00/00:00
  • Short Time Degradation: VG and T Dependence 30. Short Time Degradation: VG and… 2200.2419986724854
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  • Short Time Degradation: Other Measurements 31. Short Time Degradation: Other … 2349.3519992828369
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  • Summary 32. Summary 2442.57200050354
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  • Outline 33. Outline 2538.113000869751
    00:00/00:00