MOSFET Design Calculations - Step 3 (Instructor Copy)

By Jose Valdez

University of Texas at El Paso

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Published on

Abstract

A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET simulations using the nanoHUB MOSFET tool.

Submitter

Stella Quinones

University of Texas at El Paso

Tags

  1. nanoelectronics
  2. MOSFET
  3. short channel effect
  4. channel length
  5. Lmin