As the future of Moore’s law of transistor scaling appears uncertain, Electronics is trying to reinvent itself by integrating non-CMOS devices such as electronic-nose, biosensors, MEMS/NEMS onto the traditional CMOS platform. Such technologies (e.g. Mote technology for environment sensing for Intel, Marisol technology for display from Qualcomm, DNA sensors from Ion Torrent, etc.) have the potential to transform classical electronics by making it relevant to broader range of applications than classical CMOS-platform itself could address.
Among these various enabling devices, the Micro-electromechanical (MEMS) switches have potential applications in communication (e.g., RF-MEMS switches), in computation for sub 60 mV/dec switching (e.g., NEM-relay), in adaptive optics for mirrors, passive color displays (e.g., Marisol technology), and active cantilever based biosensors with sensitivity beyond the thermodynamic limit. This class of ‘phase-change’ switches is fundamentally different and offers many functionalities inaccessible to classical transistors. And yet, this exciting technology remains stymied by reliability concerns (e.g., stiction, dielectric charging, and salt penetration), high actuation voltage and power-dissipation related to intrinsic hysteresis and pull-in characteristics, and inability to tailor travel-range arbitrarily for various applications. In this talk, I will discuss an elementary theory of the role of nanostructured electrodes in addressing some of the challenges from a fundamentally different perspective. The goal is to start a conversation regarding the viability of the approaches suggested and see if the perspective offered is realistic and relevant.
Researchers should cite this work as follows:
Burton Morgan 121, Purdue University, West Lafayette, IN
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