Device technology is driven advances in materials science and the resulting discovery of new physical phenomena. Molecular beam epitaxy (MBE) allows the controlled growth of heterogeneous materials with atomic layer precision and extreme purity. These attributes make MBE a logical choice for the growth of new heterostructured materials and the exploration of new physics. In this talk I will discuss the role of MBE in developing new paradigms in nanotechnology. Specifically I will describe ongoing efforts at Purdue University to grow GaN and ultra-pure GaAs by MBE. GaN is studied as a route to novel infrared light sources while the GaAs effort focuses on elucidating new correlated states of matter that may find utility in quantum computing.
Michael J. Manfra received his A.B. in physics from Harvard University in 1992 and his Ph.D. from Boston University in 1999. Currently, he is the William F. and Patty J. Miller Associate Professor of Physics, Associate Professor of Materials Engineering, and Associate Professor of Electrical and Computer Engineering at Purdue University.
Jawaharlal Nehru Centre for Advanced Scientific Research
Indo-US Science & Technology Forum
NSF - Office of International Science and Engineering
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MGRN 121, Purdue University, West Lafayette, IN