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Carrier Concentration

By Stephanie Michelle Sanchez1, Ivan Santos1, Stella Quinones1

1. University of Texas at El Paso

Calculate the carrier concentration for a semiconductor material as a function of doping and temperature.

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Archive Version 1.0
Published on 21 Jun 2012
Latest version: 2.0. All versions

doi:10.4231/D3M61BP3Q cite this

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The tool calculates the electron and hole concentration for a semiconductor material for five special cases: intrinsic, N-Type, P-Type, high temperature, and compensated.

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UTEP NCN Research Team

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This project is supported by NSF NCN Grant EEC-0634750.


[1] R. Pierret, Semiconductor Device Fundamentals. Addison Wesley Longman, 1996. [2] C. C. Hu, Modern Semiconductor Devices for Integrated Circuits. Upper Saddle River, NJ: Pearson, 2010. [3] B. G. Streetman, S. Banerjee, Solid State Electronic Devices. 5th Edition. Upper Saddle River, NJ: Pearson, 2004.

Cite this work

Researchers should cite this work as follows:

  • Stephanie Michelle Sanchez; Ivan Santos; Stella Quinones (2014), "Carrier Concentration," (DOI: 10.4231/D3M61BP3Q).

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Tags, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.