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Mobility and Resistivity Tool

By Ivan Santos1, Stephanie Michelle Sanchez1, Stella Quinones1

1. University of Texas at El Paso

Understand how doping affects mobility and resistivity.

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Archive Version 1.0
Published on 26 Jun 2012
Latest version: 2.0. All versions

doi:10.4231/D3BN9X25P cite this

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This tool calculates the electron and hole mobility in a semiconductor as well as its resistivity as a function of doping at room temperature (300K) using an empirical curve fit model for the electron and hole mobility.

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NCN UTEP Research Team

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This project is supported by NSF NCN Grant EEC-0634750.


[1] R. Pierret, Semiconductor Device Fundamentals. Addison Wesley Longman, 1996. [2] C. C. Hu, Modern Semiconductor Devices for Integrated Circuits. Upper Saddle River, NJ: Pearson, 2010.

Cite this work

Researchers should cite this work as follows:

  • Ivan Santos; Stephanie Michelle Sanchez; Stella Quinones (2014), "Mobility and Resistivity Tool," (DOI: 10.4231/D3BN9X25P).

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Tags, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.