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This tool calculates the electron and hole mobility in a semiconductor as well as its resistivity as a function of doping at room temperature (300K) using an empirical curve fit model for the electron and hole mobility.
NCN UTEP Research Team
This project is supported by NSF NCN Grant EEC-0634750.
 R. Pierret, Semiconductor Device Fundamentals. Addison Wesley Longman, 1996.  C. C. Hu, Modern Semiconductor Devices for Integrated Circuits. Upper Saddle River, NJ: Pearson, 2010.
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