(Audio improves considerably at 0:26) Secondary ion mass spectrometry is an analytical technique based on the measurement of themass of ions ejected from a solid surface after the surface has been bombarded with high energy (1-25 keV) primary ions.
An ongoing interest in both the fundamental understanding of materials and in the development of the next generation of microelectronic devices is the measurement and understanding of the morphological evolution of surfaces and interfaces of thin films. For this purpose, it is necessary to develop and exploit new techniques to examine the fundamental processes that occur at these interfaces.
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