Nanoscale Transistors Lecture 4: MOS Electrostatics

By Mark Lundstrom

Electrical and Computer Engineering, Purdue University, West Lafayette, IN

Published on

Cite this work

Researchers should cite this work as follows:

  • Mark Lundstrom (2012), "Nanoscale Transistors Lecture 4: MOS Electrostatics," https://nanohub.org/resources/14763.

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Location

Burton Morgan, Rm 121, Purdue University, West Lafayette, IN

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Nanoscale Transistors Lecture 4: MOS Electrostatics
  • Lecture 4: MOS Electrostatics 1. Lecture 4: MOS Electrostatics 0
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  • understanding MOSFETs 2. understanding MOSFETs 50.06666666666667
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  • 1D MOS electrostatics 3. 1D MOS electrostatics 65.566666666666663
    00:00/00:00
  • 1D MOS electrostatics 4. 1D MOS electrostatics 91.4
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  • 5. "flat band conditions" 112.96666666666667
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  • positive gate voltage 6. positive gate voltage 213.66666666666666
    00:00/00:00
  • depletion charge 7. depletion charge 313.06666666666666
    00:00/00:00
  • mobile charge 8. mobile charge 427.3
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  • onset of inversion 9. onset of inversion 599.13333333333333
    00:00/00:00
  • gate voltage – mobile charge relation (i) 10. gate voltage – mobile charge… 715.66666666666663
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  • subthreshold charge vs. gate voltage 11. subthreshold charge vs. gate v… 819.23333333333335
    00:00/00:00
  • subthreshold charge vs. gate voltage 12. subthreshold charge vs. gate v… 924.1
    00:00/00:00
  • subthreshold charge vs. gate voltage 13. subthreshold charge vs. gate v… 1008.3666666666667
    00:00/00:00
  • subthreshold charge vs. gate voltage 14. subthreshold charge vs. gate v… 1099.2
    00:00/00:00
  • above threshold charge vs. gate voltage 15. above threshold charge vs. gat… 1160
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  • above threshold charge vs. gate voltage 16. above threshold charge vs. gat… 1273.7333333333334
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  • re-cap 17. re-cap 1376.5333333333333
    00:00/00:00
  • channel charge vs. gate voltage 18. channel charge vs. gate voltag… 1442.8333333333333
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  • channel charge vs. gate voltage 19. channel charge vs. gate voltag… 1495.1333333333334
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  • 2D electrostatics 20. 2D electrostatics 1544.4333333333334
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  • 21. "well-tempered MOSFET" 1610.1
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  • 2D MOS electrostatics 22. 2D MOS electrostatics 1664.8333333333333
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  • nanoMOS simulations 23. nanoMOS simulations 1724
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  • geometric scaling length, Λ 24. geometric scaling length, Λ 1777.5666666666666
    00:00/00:00
  • non-planar MOSFETs 25. non-planar MOSFETs 1874.9333333333334
    00:00/00:00
  • barrier lowering 26. barrier lowering 1894.3
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  • no barrier lowering  no DIBL 27. no barrier lowering  no DIB… 1946.1666666666667
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  • barrier lowering 28. barrier lowering 1967.4666666666667
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  • barrier lowering increases current 29. barrier lowering increases cur… 2002.7666666666667
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  • summary 30. summary 2037.7333333333334
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  • references 31. references 2105.2666666666669
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